| PART |
Description |
Maker |
| 2N6500 2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS
|
ETC
GE Solid State
|
| 2N3878 2N3879 2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS
|
GESS[GE Solid State]
ETC[ETC]
|
| BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦（高电流增益高集电极电流低集电极发射极饱和电压）
|
Siemens Semiconductor G...
Diotec Elektronische
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| PS9121 PS9121-F3 PS9121-F4 |
High CMR, 10 Mbps open collector output type 3.3V high-speed photocoupler.
|
NEC
|
| PS9814 PS9814-1 PS9814-2 |
NECs 10 Mbps HIGH CMR OPEN COLLECTOR OUTPUT TYPE 8-PIN SOP HIGH-SPEED PHOTOCOUPLER
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| PS9587L3-V-AX PS9587L1-AX PS9587L1-V PS9587L1-V-AX |
HIGH CMR, 10 Mbps OPEN COLLECTOR OUTPUT TYPE 8-PIN DIP HIGH-SPEED PHOTOCOUPLER FOR CREEPAGE DISTANCE OF 8 mm
|
NEC
|
| NTE3087 |
Optoisolator High Speed Open Collector NAND Gate Output
Optoisolator High Speed, Open Collector, NAND Gate Output
|
NTE[NTE Electronics]
|
| 2SB935A |
Low collector-emitter saturation voltage VCE(sat). High-speed switching.
|
TY Semiconductor Co., L...
|
| 2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V.
DIODE FOR HIGH SPEED SWICHING APPLICATION SILICON EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| MJB18004D2T4-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
